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Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0.

Product Details

Model Number: SPS600B12G6

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Half Bridge IGBT Modules 62mm

,

62mm IGBT Half Bridge Module

,

600A IGBT Half Bridge Module

Collector Current:
100A
Collector-Emitter Voltage:
1200V
Current:
100A
Gate Charge:
100nC
Gate-Emitter Voltage:
±20V
Isolation Voltage:
2500V
Maximum Operating Temperature:
150°C
Mounting Style:
Screw
Output Current:
100A
Package Type:
62mm
Reverse Recovery Time:
100ns
Switching Frequency:
20kHz
Thermal Resistance:
0.2°C/W
Voltage:
1200V
Collector Current:
100A
Collector-Emitter Voltage:
1200V
Current:
100A
Gate Charge:
100nC
Gate-Emitter Voltage:
±20V
Isolation Voltage:
2500V
Maximum Operating Temperature:
150°C
Mounting Style:
Screw
Output Current:
100A
Package Type:
62mm
Reverse Recovery Time:
100ns
Switching Frequency:
20kHz
Thermal Resistance:
0.2°C/W
Voltage:
1200V
Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0.

Solid Power-DS-SPS600B12G6-S0402G0037 V-1.0.

1200V 600A IGBT Half Bridge Module

Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 0

 

 

Features:

  • 1200V Trench+ Field Stop technology
  • Freewheeling diodes with fast and soft reverse recovery
  • VCE(sat) with positive temperature coefficient
  • Low switching losses
  • Short circuit ruggedness

Typical Applications: 

  • Motor/Servo Drives
  • Wind Turbines Converters
  • PV Inverters
  • Energy Storage Converters
  • UPS

 

Package 

Item Symbol Conditions Values Unit

Isolation test voltage

VISOL RMS, f = 50 Hz, t =1 min

 

4.0

kV

Material of module baseplate

   

 

Cu

 

Internal isolation

 

(class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

 

Al2O3

 

Creepage distance

dCreep terminal to heatsink 29.0

mm

dCreep terminal to terminal 23.0

Clearance

dClear terminal to heatsink 23.0

mm

dClear terminal to terminal 11.0

Comparative tracking index

CTI  

 

>400

 
   
Item Symbol Conditions Values Unit
Min. Typ. Max.

Stray inductance module

LsCE    

 

20

 

nH

Module lead resistance, terminals - chip

RCC’+EE’   TC=25℃  

0.70

 

Storage temperature

Tstg  

 

-40

 

125

Mounting torque for module mounting

M6  

 

3.0

 

 

6.0

Nm

Terminal connection torque

M6  

 

2.5

 

 

5.0

Nm

Weight

G    

320

 

g

 

IGBT

Maximum Rated Values / 最大额定值

 

Item Symbol Conditions Values Unit

Collector-emitter Voltage

VCES   Tvj=25℃

 

1200

 

V

Maximum gate-emitter voltage

VGES  

 

±20

 

V

Transient gate-emitter voltage

VGES tp≤10μs,D=0.01

 

±30

 

V

Continuous DC collector current

IC   TC=25℃ 700

 

A

TC=80℃ 550

Pulsed collector current,tp limited by Tjmax

ICpulse  

 

1200

 

A

Power dissipation

Ptot  

 

2142

 

W

 

 

Characteristic Values / 特征值

 

Item Symbol Conditions Values Unit
Min. Typ. Max.

集电极-发射极饱和电压

Collector-emitter saturation voltage

VCE(sat) IC=600A, VGE=15V Tvj=25℃   2.00 2.40

 

V

Tvj=125℃   2.40  
Tvj=150℃   2.50  

栅极阈值电压

Gate threshold voltage

VGE(th) VCE=VGE, IC=24mA

 

5.5

 

6.3

 

7.0

 

V

集电极-发射极截止电流

Collector-emitter cut-off current

ICES VCE=1200V, VGE=0V Tvj=25℃     100 µA
Tvj=150℃     5 mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES VCE=0V,VGE=±20V, Tvj=25℃

 

-200

 

 

200

 

nA

栅极电荷

Gate Charge

QG VCE=600V, IC=600A , VGE=±15V   5.0   μC

输入电容

Input Capacitance

Cies VCE=25V, VGE=0V, f =100kHz   80.0  

 

 

nF

输出电容

Output Capacitance

Coes   2.85  

反向传输电容

Reverse Transfer Capacitance

Cres   1.48  

内部栅极电阻

Internal gate resistor

RGint Tvj=25℃   2   Ω

开通延迟时间(电感负载)

Turn-on delay time,inductive load

td(on) VCC=600V,IC=600A RG=1.5Ω, VGE=±15V Tvj=25℃   340   ns
Tvj=125℃   376   ns
Tvj=150℃   384   ns

上升时间(电感负载)

Rise Time,inductive load

tr Tvj=25℃   108   ns
Tvj=125℃   124   ns
Tvj=150℃   132   ns

关断延迟时间(电感负载)

Turn-off delay time,inductive load

td(off) VCC=600V,IC=600A RG=1.5Ω, VGE=±15V Tvj=25℃   616   ns
Tvj=125℃   676   ns
Tvj=150℃   682   ns

下降时间(电感负载)

Fall time,inductive load

tf Tvj=25℃   72   ns
Tvj=125℃   76   ns
Tvj=150℃   104   ns

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon VCC=600V,IC=600A RG=1.5Ω, VGE=±15V Tvj=25℃   57.9   mJ
Tvj=125℃   82.2   mJ
Tvj=150℃   91.4   mJ

关断损耗能量(每脉冲)

Turn off Energy loss per pulse

Eoff Tvj=25℃   45.2   mJ
Tvj=125℃   55.3   mJ
Tvj=150℃   58.7   mJ

短路数据

SC data

ISC

VGE≤15V,

VCC=800V

tp≤10µs

Tvj=150℃

   

 

2500

 

A

IGBT结-外壳热阻

IGBT thermal resistance,junction-case

RthJC       0.07 K /W

工作温度

Operating Temperature

TJop   -40   150

 

Diode / 二极管

Maximum Rated Values / 最大额定值

Item Symbol Conditions Values Unit

反向重复峰值电压

Repetitive reverse voltage

VRRM   Tvj=25℃

 

1200

 

V

连续正向直流电流

Continuous DC forward current

IF  

 

600

 

 

A

二极管正向不重复峰值电流

Diode pulsed current,tp limited by TJmax

IFpulse  

 

1200

           

 

 

Characteristic Values / 特征值

Item Symbol Conditions Values Unit
Min. Typ. Max.

正向电压

Forward voltage

VF IF=600A , VGE=0V Tvj=25℃   1.65 2.00

 

V

Tvj=125℃   1.80  
Tvj=150℃   1.80  

反向恢复时间

Reverse recovery time

Trr

IF=600A

dIF/dt=-4900A/μs (Tvj=150°C) VR=600V,

VGE=-15V

Tvj=25℃   224  

 

ns

Tvj=125℃ 300
Tvj=150℃ 335

反向恢复峰值电流

Peak reverse recovery current

IRRM Tvj=25℃   624  

 

A

Tvj=125℃ 649
Tvj=150℃ 665

反向恢复电荷

Reverse recovery charge

QRR Tvj=25℃   95  

 

µC

Tvj=125℃ 134.9
Tvj=150℃ 147.4

反向恢复损耗(每脉冲)

Reverse recovery energy loss per pulse

Erec Tvj=25℃   35.4  

 

mJ

Tvj=125℃ 49.7
Tvj=150℃ 55.9

二极管结-外壳热阻

Diode thermal resistance,junction-case

RthJCD      

 

0.13

 

K /W

工作温度

Operating Temperature

TJop  

 

-40

 

 

150

  ℃

 

Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 1

Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 2

Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 3Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 4Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 5Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 6Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 7Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 8Half Bridge IGBT Modules 62mm 1200V 600A DS-SPS600B12G6-S0402G0037 V-1.0. 9