Product Details
Model Number: SPS600B12G6
Payment & Shipping Terms
Collector Current: |
100A |
Collector-Emitter Voltage: |
1200V |
Current: |
100A |
Gate Charge: |
100nC |
Gate-Emitter Voltage: |
±20V |
Isolation Voltage: |
2500V |
Maximum Operating Temperature: |
150°C |
Mounting Style: |
Screw |
Output Current: |
100A |
Package Type: |
62mm |
Reverse Recovery Time: |
100ns |
Switching Frequency: |
20kHz |
Thermal Resistance: |
0.2°C/W |
Voltage: |
1200V |
Collector Current: |
100A |
Collector-Emitter Voltage: |
1200V |
Current: |
100A |
Gate Charge: |
100nC |
Gate-Emitter Voltage: |
±20V |
Isolation Voltage: |
2500V |
Maximum Operating Temperature: |
150°C |
Mounting Style: |
Screw |
Output Current: |
100A |
Package Type: |
62mm |
Reverse Recovery Time: |
100ns |
Switching Frequency: |
20kHz |
Thermal Resistance: |
0.2°C/W |
Voltage: |
1200V |
Solid Power-DS-SPS600B12G6-S0402G0037 V-1.0.
Features:
Typical Applications:
Item | Symbol | Conditions | Values | Unit | |||
Isolation test voltage |
VISOL | RMS, f = 50 Hz, t =1 min |
4.0 |
kV |
|||
Material of module baseplate |
Cu |
||||||
Internal isolation |
(class 1, IEC 61140) Basic insulation (class 1, IEC 61140) |
Al2O3 |
|||||
Creepage distance |
dCreep | terminal to heatsink | 29.0 |
mm |
|||
dCreep | terminal to terminal | 23.0 | |||||
Clearance |
dClear | terminal to heatsink | 23.0 |
mm |
|||
dClear | terminal to terminal | 11.0 | |||||
Comparative tracking index |
CTI |
>400 |
|||||
Item | Symbol | Conditions | Values | Unit | |||
Min. | Typ. | Max. | |||||
Stray inductance module |
LsCE |
20 |
nH |
||||
Module lead resistance, terminals - chip |
RCC’+EE’ | TC=25℃ |
0.70 |
mΩ |
|||
Storage temperature |
Tstg |
-40 |
125 |
℃ |
|||
Mounting torque for module mounting |
M6 |
3.0 |
6.0 |
Nm |
|||
Terminal connection torque |
M6 |
2.5 |
5.0 |
Nm |
|||
Weight |
G |
320 |
g |
IGBT
Maximum Rated Values / 最大额定值
Item | Symbol | Conditions | Values | Unit | |
Collector-emitter Voltage |
VCES | Tvj=25℃ |
1200 |
V |
|
Maximum gate-emitter voltage |
VGES |
±20 |
V |
||
Transient gate-emitter voltage |
VGES | tp≤10μs,D=0.01 |
±30 |
V |
|
Continuous DC collector current |
IC | TC=25℃ | 700 |
A |
|
TC=80℃ | 550 | ||||
Pulsed collector current,tp limited by Tjmax |
ICpulse |
1200 |
A |
||
Power dissipation |
Ptot |
2142 |
W |
Characteristic Values / 特征值
Item | Symbol | Conditions | Values | Unit | |||
Min. | Typ. | Max. | |||||
集电极-发射极饱和电压 Collector-emitter saturation voltage |
VCE(sat) | IC=600A, VGE=15V | Tvj=25℃ | 2.00 | 2.40 |
V |
|
Tvj=125℃ | 2.40 | ||||||
Tvj=150℃ | 2.50 | ||||||
栅极阈值电压 Gate threshold voltage |
VGE(th) | VCE=VGE, IC=24mA |
5.5 |
6.3 |
7.0 |
V |
|
集电极-发射极截止电流 Collector-emitter cut-off current |
ICES | VCE=1200V, VGE=0V | Tvj=25℃ | 100 | µA | ||
Tvj=150℃ | 5 | mA | |||||
栅极-发射极漏电流 Gate-emitter leakage current |
IGES | VCE=0V,VGE=±20V, Tvj=25℃ |
-200 |
200 |
nA |
||
栅极电荷 Gate Charge |
QG | VCE=600V, IC=600A , VGE=±15V | 5.0 | μC | |||
输入电容 Input Capacitance |
Cies | VCE=25V, VGE=0V, f =100kHz | 80.0 |
nF |
|||
输出电容 Output Capacitance |
Coes | 2.85 | |||||
反向传输电容 Reverse Transfer Capacitance |
Cres | 1.48 | |||||
内部栅极电阻 Internal gate resistor |
RGint | Tvj=25℃ | 2 | Ω | |||
开通延迟时间(电感负载) Turn-on delay time,inductive load |
td(on) | VCC=600V,IC=600A RG=1.5Ω, VGE=±15V | Tvj=25℃ | 340 | ns | ||
Tvj=125℃ | 376 | ns | |||||
Tvj=150℃ | 384 | ns | |||||
上升时间(电感负载) Rise Time,inductive load |
tr | Tvj=25℃ | 108 | ns | |||
Tvj=125℃ | 124 | ns | |||||
Tvj=150℃ | 132 | ns | |||||
关断延迟时间(电感负载) Turn-off delay time,inductive load |
td(off) | VCC=600V,IC=600A RG=1.5Ω, VGE=±15V | Tvj=25℃ | 616 | ns | ||
Tvj=125℃ | 676 | ns | |||||
Tvj=150℃ | 682 | ns | |||||
下降时间(电感负载) Fall time,inductive load |
tf | Tvj=25℃ | 72 | ns | |||
Tvj=125℃ | 76 | ns | |||||
Tvj=150℃ | 104 | ns | |||||
开通损耗能量(每脉冲) Turn-on energy loss per pulse |
Eon | VCC=600V,IC=600A RG=1.5Ω, VGE=±15V | Tvj=25℃ | 57.9 | mJ | ||
Tvj=125℃ | 82.2 | mJ | |||||
Tvj=150℃ | 91.4 | mJ | |||||
关断损耗能量(每脉冲) Turn off Energy loss per pulse |
Eoff | Tvj=25℃ | 45.2 | mJ | |||
Tvj=125℃ | 55.3 | mJ | |||||
Tvj=150℃ | 58.7 | mJ | |||||
短路数据 SC data |
ISC |
VGE≤15V, VCC=800V |
tp≤10µs Tvj=150℃ |
2500 |
A |
||
IGBT结-外壳热阻 IGBT thermal resistance,junction-case |
RthJC | 0.07 | K /W | ||||
工作温度 Operating Temperature |
TJop | -40 | 150 | ℃ |
Item | Symbol | Conditions | Values | Unit | |
反向重复峰值电压 Repetitive reverse voltage |
VRRM | Tvj=25℃ |
1200 |
V |
|
连续正向直流电流 Continuous DC forward current |
IF |
600 |
A |
||
二极管正向不重复峰值电流 Diode pulsed current,tp limited by TJmax |
IFpulse |
1200 |
|||
Characteristic Values / 特征值
Item | Symbol | Conditions | Values | Unit | |||
Min. | Typ. | Max. | |||||
正向电压 Forward voltage |
VF | IF=600A , VGE=0V | Tvj=25℃ | 1.65 | 2.00 |
V |
|
Tvj=125℃ | 1.80 | ||||||
Tvj=150℃ | 1.80 | ||||||
反向恢复时间 Reverse recovery time |
Trr |
IF=600A dIF/dt=-4900A/μs (Tvj=150°C) VR=600V, VGE=-15V |
Tvj=25℃ | 224 |
ns |
||
Tvj=125℃ | 300 | ||||||
Tvj=150℃ | 335 | ||||||
反向恢复峰值电流 Peak reverse recovery current |
IRRM | Tvj=25℃ | 624 |
A |
|||
Tvj=125℃ | 649 | ||||||
Tvj=150℃ | 665 | ||||||
反向恢复电荷 Reverse recovery charge |
QRR | Tvj=25℃ | 95 |
µC |
|||
Tvj=125℃ | 134.9 | ||||||
Tvj=150℃ | 147.4 | ||||||
反向恢复损耗(每脉冲) Reverse recovery energy loss per pulse |
Erec | Tvj=25℃ | 35.4 |
mJ |
|||
Tvj=125℃ | 49.7 | ||||||
Tvj=150℃ | 55.9 | ||||||
二极管结-外壳热阻 Diode thermal resistance,junction-case |
RthJCD |
0.13 |
K /W |
||||
工作温度 Operating Temperature |
TJop |
-40 |
150 |
℃ |