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DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM

Name: DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM
Brand: DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM
SKU: SPS450B12G6M4
Rating: 4.7 (139 reviews)

Product Details

Model Number: SPS450B12G6M4

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Product Description

Highlight: 
                                                H Bridge Mosfet Module 1200V, 450A H Bridge Mosfet Module, ODM Mosfet Module
                              

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM

Solid Power-DS-SPS450B12G6M4-S04020021 V-1.0.

1200V 450A IGBT Half Bridge Module

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

□ Short circuit ruggedness

Typical Applications:

□ Inductive heating

□ Welding

□ High frequency switching application

IGBT Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		29.0			mm
	dCreep	terminal to terminal		23.0
Clearance	dClear	terminal to heatsink		23.0			mm
	dClear	terminal to terminal		11.0
Comparative tracking index	CTI			＞400

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.70		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M5			3.0		6.0	Nm
Terminal connection torque	M6			2.5		5.0	Nm
Weight	G				320		g

IGBT Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	675	A
Continuous DC collector current	I_C		T_C=100℃	450	A
Pulsed collector current,tp limited by T_jmax	ICpulse			900	A
Power dissipation	Ptot			1875	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=450A, V_GE=15V	T_vj=25℃		1.50	1.80	V
			T_vj=125℃		1.65
			T_vj=150℃		1.70
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=18mA		5.0	5.8	6.5	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=600V, I_C=450A , V_GE=±15V			5.0		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			90.0		nF
Output Capacitance	Coes				2.84
Reverse Transfer Capacitance	Cres				0.81
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=450A R_G=1.8Ω, V_GE=15V	T_vj=25℃		168		ns
			T_vj=125℃		172		ns
			T_vj=150℃		176		ns
Rise Time,inductive load	t_r		T_vj=25℃		80		ns
			T_vj=125℃		88		ns
			T_vj=150℃		92		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=450A R_G=1.8Ω, V_GE=15V	T_vj=25℃		624		ns
			T_vj=125℃		668		ns
			T_vj=150℃		672		ns
Fall time,inductive load	t_f		T_vj=25℃		216		ns
			T_vj=125℃		348		ns
			T_vj=150℃		356		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=450A R_G=1.8Ω, V_GE=15V	T_vj=25℃		17.2		mJ
			T_vj=125℃		27.1		mJ
			T_vj=150℃		30.0		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		52.3		mJ
			T_vj=125℃		64.3		mJ
			T_vj=150℃		67.1		mJ
SC data	ISC	V_GE≤15V, V_CC=800V	tp≤10µs T_vj=150℃			2000	A
IGBT thermal resistance,junction-case	RthJC					0.08	K /W
Operating Temperature	TJop			-40		150	℃

Diode Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			450	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			900	A

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=450A , V_GE=0V	T_vj=25℃		2.30	2.70	V
			T_vj=125℃		2.50
			T_vj=150℃		2.50
Reverse recovery time	trr	I_F=450A dI_F/dt=-5600A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		134		ns
			T_vj=125℃		216
			T_vj=150℃		227
Peak reverse recovery current	IRRM		T_vj=25℃		317		A
			T_vj=125℃		376
			T_vj=150℃		379
Reverse recovery charge	QRR		T_vj=25℃		40.5		µC
			T_vj=125℃		63.2
			T_vj=150℃		65.4
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		15.9		mJ
			T_vj=125℃		27.0
			T_vj=150℃		28.1
Diode thermal resistance,junction-case	RthJCD					0.13	K /W
Operating Temperature	TJop			-40		150	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE) T_vj= 150°C

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 1

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 450A, V_CE = 600V

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 2

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 1.8Ω , V_CE = 600V V_GE = ±15V, R_goff = 3.3Ω, T_vj = 150°C

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 3

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 450A, V_CE = 600V

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 4

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 5

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 450A, V_CE = 600V R_G = 1.8Ω, V_CE = 600V

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 6

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 7

A 1200V IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device with a voltage rating of 1200 volts. This type of device is commonly used in high-voltage applications such as power inverters and motor drives.

Key points:

1. Voltage Rating (1200V): Indicates the maximum voltage the IGBT can handle. Suitable for applications requiring high-voltage control, such as high-power motor drives and uninterruptible power supplies.

2. Applications: 1200V IGBTs are common in high-power fields such as industrial motor drives, uninterruptible power supplies (UPS), renewable energy systems, etc., where precise control of high voltage is needed.

3. Switching Speed: IGBTs can switch on and off rapidly, making them suitable for applications requiring high-frequency switching. Specific switching characteristics depend on the model and manufacturer.

4. Cooling Requirements:** Like many power electronic devices, IGBTs generate heat during operation. Adequate cooling methods, such as heatsinks or other thermal management systems, are often required to ensure device performance and reliability.

5. Datasheet:For detailed information about a specific 1200V IGBT, it is essential to refer to the manufacturer's datasheet. The datasheet provides comprehensive technical specifications, electrical characteristics, and guidelines for application and thermal management.

When using a 1200V IGBT in a circuit or system, designers must consider factors such as gate drive requirements, protection mechanisms, and thermal considerations to ensure correct and reliable operation.

Circuit diagram headline

Package outlines

DS-SPS450B12G6M4-S04020021 V-1.0. H Bridge Mosfet Module 1200V 450A ODM 9

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