OEM IGBT Power Module 1200V 300A Half Bridge Module DS-SPS300B12G6M4-S04020025
Solid Power-DS-SPS300B12G6M4-S04020025
1200V 300A IGBT Half Bridge Module
□ 1200V Trench+ Field Stop technology
□ Freewheeling diodes with fast and soft reverse recovery
□ VCE(sat) with positive temperature coefficient
□ Low switching losses
□ Inductive heating
□ Welding
□ High frequency switching application
Package
| Item |
Symbol |
Conditions |
Values |
Unit |
|
Isolation test voltage
|
VISOL |
RMS, f = 50 Hz, t =1 min |
4.0
|
kV
|
|
Material of module baseplate
|
|
|
Cu
|
|
|
Internal isolation
|
|
(class 1, IEC 61140)
Basic insulation (class 1, IEC 61140)
|
Al2O3
|
|
|
Creepage distance
|
dCreep |
terminal to heatsink |
29.0 |
mm
|
| dCreep |
terminal to terminal |
23.0 |
|
Clearance
|
dClear |
terminal to heatsink |
23.0 |
mm
|
| dClear |
terminal to terminal |
11.0 |
|
Comparative tracking index
|
CTI |
|
＞400
|
|
| |
|
| Item |
Symbol |
Conditions |
Values |
Unit |
| Min. |
Typ. |
Max. |
|
Stray inductance module
|
LsCE |
|
|
20
|
|
nH
|
|
Module lead resistance, terminals - chip
|
RCC’+EE’ |
|
TC=25℃ |
|
0.70
|
|
mΩ
|
|
Storage temperature
|
Tstg |
|
-40
|
|
125
|
℃ |
|
Mounting torque for module mounting
|
M6 |
|
3.0
|
|
6.0
|
Nm
|
|
Terminal connection torque
|
M6 |
|
2.5
|
|
5.0
|
Nm
|
|
Weight
|
G |
|
|
320
|
|
g
|
IGBT
Maximum Rated Values
| Item |
Symbol |
Conditions |
Values |
Unit |
|
Collector-emitter Voltage
|
VCES |
|
Tvj=25℃ |
1200
|
V
|
|
Maximum gate-emitter voltage
|
VGES |
|
±20
|
V
|
|
Transient gate-emitter voltage
|
VGES |
tp≤10μs,D=0.01 |
±30
|
V
|
|
Continuous DC collector current
|
IC |
|
TC=25℃ |
400 |
A
|
| TC=100℃ |
300 |
|
Pulsed collector current,tp limited by Tjmax
|
ICpulse |
|
600
|
A
|
|
Power dissipation
|
Ptot |
|
1500
|
W
|
Characteristic Values
| Item |
Symbol |
Conditions |
Values |
Unit |
| Min. |
Typ. |
Max. |
|
Collector-emitter saturation voltage
|
VCE(sat) |
IC=300A, VGE=15V |
Tvj=25℃ |
|
1.50 |
1.80 |
V
|
| Tvj=125℃ |
|
1.65 |
|
| Tvj=150℃ |
|
1.70 |
|
|
Gate threshold voltage
|
VGE(th) |
VCE=VGE, IC=12mA |
5.0
|
5.8
|
6.5
|
V
|
|
Collector-emitter cut-off current
|
ICES |
VCE=1200V, VGE=0V |
Tvj=25℃ |
|
|
100 |
µA |
| Tvj=150℃ |
|
|
5 |
mA |
|
Gate-emitter leakage current
|
IGES |
VCE=0V,VGE=±20V, Tvj=25℃ |
-200 |
|
200 |
nA |
|
Gate Charge
|
QG |
VCE=600V, IC=300A , VGE=±15V |
|
3.2 |
|
μC |
|
Input Capacitance
|
Cies |
VCE=25V, VGE=0V, f =100kHz |
|
60.0 |
|
nF
|
|
Output Capacitance
|
Coes |
|
1.89 |
|
|
Reverse Transfer Capacitance
|
Cres |
|
0.54 |
|
|
Internal gate resistor
|
RGint |
Tvj=25℃ |
|
1.2 |
|
Ω |
|
Turn-on delay time,inductive load
|
td(on) |
VCC=600V,IC=300A RG=1.8Ω, VGE=±15V |
Tvj=25℃ |
|
130 |
|
ns |
| Tvj=125℃ |
|
145 |
|
ns |
| Tvj=150℃ |
|
145 |
|
ns |
|
Rise Time,inductive load
|
tr |
Tvj=25℃ |
|
60 |
|
ns |
| Tvj=125℃ |
|
68 |
|
ns |
| Tvj=150℃ |
|
68 |
|
ns |
|
Turn-off delay time,inductive load
|
td(off) |
VCC=600V,IC=300A RG=1.8Ω, VGE=±15V |
Tvj=25℃ |
|
504 |
|
ns |
| Tvj=125℃ |
|
544 |
|
ns |
| Tvj=150℃ |
|
544 |
|
ns |
|
Fall time,inductive load
|
tf |
Tvj=25℃ |
|
244 |
|
ns |
| Tvj=125℃ |
|
365 |
|
ns |
| Tvj=150℃ |
|
370 |
|
ns |
|
Turn-on energy loss per pulse
|
Eon |
VCC=600V,IC=300A RG=1.8Ω, VGE=±15V |
Tvj=25℃ |
|
7.4 |
|
mJ |
| Tvj=125℃ |
|
11.1 |
|
mJ |
| Tvj=150℃ |
|
11.6 |
|
mJ |
|
Turn off Energy loss per pulse
|
Eoff |
Tvj=25℃ |
|
32.0 |
|
mJ |
| Tvj=125℃ |
|
39.5 |
|
mJ |
| Tvj=150℃ |
|
41.2 |
|
mJ |
|
SC data
|
ISC |
VGE≤15V, VCC=600V |
tp≤10µs Tvj=150℃ |
|
|
1350
|
A
|
|
IGBT thermal resistance,junction-case
|
RthJC |
|
|
|
0.1 |
K /W |
|
Operating Temperature
|
TJop |
|
-40 |
|
150 |
℃ |
Diode
Maximum Rated Values
| Item |
Symbol |
Conditions |
Values |
Unit |
|
Repetitive reverse voltage
|
VRRM |
|
Tvj=25℃ |
1200
|
V
|
|
Continuous DC forward current
|
IF |
|
300
|
A
|
|
Diode pulsed current,tp limited by TJmax
|
IFpulse |
|
600 |
Characteristic Values
| Item |
Symbol |
Conditions |
Values |
Unit |
| Min. |
Typ. |
Max. |
|
Forward voltage
|
VF |
IF=300A , VGE=0V |
Tvj=25℃ |
|
2.30 |
2.70 |
V
|
| Tvj=125℃ |
|
2.50 |
|
| Tvj=150℃ |
|
2.50 |
|
|
Reverse recovery time
|
trr |
IF=300A
dIF/dt=-4900A/μs (Tvj=150°C) VR=600V,
VGE=-15V
|
Tvj=25℃ |
|
90 |
|
ns
|
| Tvj=125℃ |
120 |
| Tvj=150℃ |
126 |
|
Peak reverse recovery current
|
IRRM |
Tvj=25℃ |
|
212 |
|
A
|
| Tvj=125℃ |
245 |
| Tvj=150℃ |
250 |
|
Reverse recovery charge
|
QRR |
Tvj=25℃ |
|
19 |
|
µC
|
| Tvj=125℃ |
27 |
| Tvj=150℃ |
35 |
|
Reverse recovery energy loss per pulse
|
Erec |
Tvj=25℃ |
|
7.7 |
|
mJ
|
| Tvj=125℃ |
13.3 |
| Tvj=150℃ |
14.0 |
|
Diode thermal resistance,junction-case
|
RthJCD |
|
|
|
0.23
|
K /W
|
|
Operating Temperature
|
TJop |
|
-40
|
|
150
|
℃ |
Output characteristic(typical) Output characteristic(typical)
IC = f (VCE) IC = f (VCE)
Tvj= 150°C
IGBT
Transfer characteristic(typical) Switching losses IGBT (typical)
IC = f (VGE) E = f (RG)
VCE = 20V VGE = ±15V, IC = 300A, VCE = 600V
IGBT RBSOA
Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)
E = f (IC) IC =f (VCE)
VGE = ±15V, RG = 1.8Ω , VCE = 600V VGE = ±15V, RGoff = 1.8Ω, Tvj = 150°C
Typical capacitance as a function of collector-emitter voltage Gate charge (typical)
C = f (VCE) VGE = f (QG)
f = 100 kHz, VGE = 0V IC = 300A, VCE = 600V
IGBT
IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)
Zth(j-c) = f (t) IF = f (VF)
Switching losses Diode(typical) Switching losses Diode(typical)
Erec = f (RG) Erec = f (IF)
IF = 300A, VCE = 600V RG = 1.8Ω, VCE = 600V
Diode transient thermal impedance as a function of pulse width
Zth(j-c) = f (t)
An IGBT half-bridge module is a power electronic device that combines two Insulated Gate Bipolar Transistors (IGBTs) arranged in a half-bridge configuration. This configuration is commonly used in various applications where bidirectional control of power is required. Here are some key points about IGBT half-bridge modules:
1. IGBTs: IGBTs are semiconductor devices that combine the characteristics of both insulated gate field-effect transistors (IGFETs) and bipolar junction transistors (BJTs). They are widely used in power electronics for switching and controlling electrical power.
2. Half-Bridge Configuration: The half-bridge configuration consists of two IGBTs connected in series, forming a bridge circuit. One IGBT is responsible for conducting during the positive half-cycle of the input waveform, while the other conducts during the negative half-cycle. This arrangement allows bidirectional control of the current.
3. Voltage and Current Ratings: IGBT half-bridge modules are specified with voltage and current ratings. For example, a common rating might be 1200V/300A, indicating the maximum voltage and current the module can handle.
4. Applications: IGBT half-bridge modules find applications in motor drives, inverters, power supplies, and other systems requiring controlled power switching. They are suitable for applications where variable speed control or power inversion is needed.
5. Cooling and Thermal Management: As with individual IGBTs, IGBT half-bridge modules generate heat during operation. Adequate cooling methods, such as heatsinks or other thermal management systems, are crucial to maintain proper device performance and reliability.
6. Gate Drive Circuitry: Proper gate drive circuitry is essential to control the switching of IGBTs effectively. This includes ensuring that the gate signals are appropriately timed and have sufficient voltage levels.
7. Datasheet: Users should refer to the manufacturer's datasheet for detailed specifications, electrical characteristics, and application guidelines specific to the IGBT half-bridge module they are using.
IGBT half-bridge modules are widely employed in industrial and automotive applications for their capability to handle high power levels and provide efficient and controlled switching of electrical currents.
Circuit diagram headline
Package outlines
Dimensions in (mm)
mm
Your message must be between 20-3,000 characters!
