products

Home > products > IGBT Modules EasyPIM > 1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Catagories

IGBT Discrete

(2)

Contacts

Contacts: Mr. Zhou

Tel: 86-1360-528-8329

Contact Now

Mail Us

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Name: 1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003
Brand: 1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003
SKU: SPS15P12W1M4
Rating: 4.5 (108 reviews)

Product Details

Model Number: SPS15P12W1M4

Payment & Shipping Terms

Get Best Price

Product Details

Product Description

Highlight: 
                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                1200V 15A IGBT Modules EasyPIM, 1200V 15A IGBT PIM, Custom IGBT PIM
                              

Collector Current:	100A	Collector Emitter Voltage:	1200V
Current:	100A	Gate Emitter Charge:	120nC
Gate Emitter Resistance:	1.5Ω	Gate Emitter Voltage:	±20V
Module Weight:	200g	Operating Temperature:	-40°C To +150°C
Package Type:	EasyPIM	Reverse Recovery Time:	50ns
Short Circuit Withstand Time:	10μs	Switching Frequency:	20kHz
Thermal Resistance:	0.1°C/W	Voltage:	1200V
Product Name:	Driver IGBT Module, IGBT Transistor Module, Single Igbt Module

Collector Current:	100A
Collector Emitter Voltage:	1200V
Current:	100A
Gate Emitter Charge:	120nC
Gate Emitter Resistance:	1.5Ω
Gate Emitter Voltage:	±20V
Module Weight:	200g
Operating Temperature:	-40°C To +150°C
Package Type:	EasyPIM
Reverse Recovery Time:	50ns
Short Circuit Withstand Time:	10μs
Switching Frequency:	20kHz
Thermal Resistance:	0.1°C/W
Voltage:	1200V
Product Name:	Driver IGBT Module, IGBT Transistor Module, Single Igbt Module

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003

Solid Power-DS-SPS15P12W1M4-S040600003

1200V 15A IGBT PIM Module

1200V 15A IGBT PIM

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

□ Short circuit ruggedness

Typical Applications:

□ Servo Drives

□ Converters

□ Inverters

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		2.5			kV
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		11.5			mm
	dCreep	terminal to terminal		6.3
Clearance	dClear	terminal to heatsink		10.0			mm
	dClear	terminal to terminal		5.0
Comparative tracking index	CTI			＞200

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				30		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		8.00		mΩ
	RAA’+CC’				6.00
Storage temperature	Tstg			-40		125	℃
Mounting Force Per Clamp	F			20		50	N
Weight	G				23		g

IGBT,/IGBT,Inverter

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	20	A
Continuous DC collector current	I_C		T_C=80℃	15	A
Pulsed collector current,tp limited by T_jmax	ICpulse			30	A
Power dissipation	Ptot			130	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=15A, V_GE=15V	T_vj=25℃		1.95	2.40	V
			T_vj=125℃		2.46
			T_vj=150℃		2.54
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=0.48mA		5.1	5.7	6.3	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-100		100	nA
Gate Charge	Q_G	V_CE=600V, I_C=15A , V_GE=±15V			0.1		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =1MHz			0.9		nF
Reverse Transfer Capacitance	Cres	V_CE=25V, V_GE=0V, f =1MHz			0.04		nF
Internal gate resistor	RGint	T_vj=25℃			0		Ω
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=15A R_G=40Ω V_GE=±15V	T_vj=25℃		46		ns
			T_vj=125℃		42		ns
			T_vj=150℃		44		ns
Rise Time,inductive load	t_r		T_vj=25℃		38		ns
			T_vj=125℃		41		ns
			T_vj=150℃		39		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=15A R_G=40Ω V_GE=±15V	T_vj=25℃		215		ns
			T_vj=125℃		249		ns
			T_vj=150℃		259		ns
Fall time,inductive load	t_f		T_vj=25℃		196		ns
			T_vj=125℃		221		ns
			T_vj=150℃		203		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=15A R_G=40Ω V_GE=±15V	T_vj=25℃		1.57		mJ
			T_vj=125℃		2.12		mJ
			T_vj=150℃		2.25		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		0.89		mJ
			T_vj=125℃		1.07		mJ
			T_vj=150℃		1.16		mJ
SC data	ISC	V_GE≤15V, V_CC=800V	tp≤10µs T_vj=150℃		70		A
IGBT thermal resistance,junction-case	RthJC					1.15	K /W
Operating Temperature	TJop			-40		150	℃

Diode,Inverter

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			15	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			30	A
I²t-value	I²t	tp=10ms	T_vj=125℃	136	A²s

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=15A , V_GE=0V	T_vj=25℃		1.60	2.10	V
			T_vj=125℃		1.75
			T_vj=150℃		1.78
Peak reverse recovery current	IRRM	I_F=15A dI_F/dt=-250A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		13		A
			T_vj=125℃		15
			T_vj=150℃		17
Reverse recovery charge	QRR		T_vj=25℃		1.87		µC
			T_vj=125℃		3.33
			T_vj=150℃		3.82
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		0.70		mJ
			T_vj=125℃		1.28
			T_vj=150℃		1.45
Diode thermal resistance,junction-case	RthJCD					1.90	K /W
Operating Temperature	TJop			-40		150	℃

Diode,Rectifier

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1600	V
Maximum RMS forward current per chip	IFRMSM		T_C=80℃	16	A
Maximum RMS current at rectifier output	IRMSM		T_C=80℃	16
Surge forward current	IFSM	t_p=10ms	T_vj=25℃	190
I²t - value	I²t	t_p=10ms	T_vj=25℃	181	A²s

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Forward voltage	V_F	I_F=15A	T_vj=25℃		0.95		V
Reverse current	I_R	V_R=1600V	T_vj=25℃			5	μA
Diode thermal resistance,junction-case	RthJCD					1.50	K /W
Operating Temperature	TJop			-40		150	℃

IGBT,Brake-Chopper/IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=80℃	15	A
Pulsed collector current,tp limited by T_jmax	ICpulse			30	A
Power dissipation	Ptot			130	W

IGBT,Brake-Chopper/IGBT

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=15A, V_GE=15V	T_vj=25℃		2.08	2.50	V
			T_vj=125℃		2.37
			T_vj=150℃		2.45
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=0.48mA		5.1	5.7	6.3	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-100		100	nA
Gate Charge	Q_G	V_CE=600V, I_C=15A , V_GE=±15V			0.1		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =1MHz			0.86		nF
Reverse Transfer Capacitance	Cres	V_CE=25V, V_GE=0V, f =1MHz			0.02		nF
Internal gate resistor	RGint	T_vj=25℃			0		Ω
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=15A R_G=40Ω V_GE=±15V	T_vj=25℃		51		ns
			T_vj=125℃		47		ns
			T_vj=150℃		40		ns
Rise Time,inductive load	t_r		T_vj=25℃		44		ns
			T_vj=125℃		48		ns
			T_vj=150℃		56		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=15A R_G=40Ω V_GE=±15V	T_vj=25℃		216		ns
			T_vj=125℃		254		ns
			T_vj=150℃		262		ns
Fall time,inductive load	t_f		T_vj=25℃		194		ns
			T_vj=125℃		213		ns
			T_vj=150℃		219		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=15A R_G=40Ω V_GE=±15V	T_vj=25℃		0.92		mJ
			T_vj=125℃		1.21		mJ
			T_vj=150℃		1.31		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		0.88		mJ
			T_vj=125℃		1.11		mJ
			T_vj=150℃		1.15		mJ
IGBT thermal resistance,junction-case	RthJC					1.15	K /W
Operating Temperature	TJop			-40		150	℃

Diode,Brake-Chopper

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			8	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			16	A
I²t-value	I²t	tp=10ms	T_vj=125℃	25	A²s

Characteristic Values

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=8A , V_GE=0V	T_vj=25℃		1.88	2.40	V
			T_vj=125℃		1.96
			T_vj=150℃		1.90
Peak reverse recovery current	IRRM	I_F=8A dI_F/dt=-200A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		6		A
			T_vj=125℃		7
			T_vj=150℃		8
Reverse recovery charge	QRR		T_vj=25℃		0.68		µC
			T_vj=125℃		1.22
			T_vj=150℃		1.32
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		0.27		mJ
			T_vj=125℃		0.49
			T_vj=150℃		0.53
Diode thermal resistance,junction-case	RthJCD					1.90	K/W
Operating Temperature	TJop			-40		150	℃

NTC-Thermistor

Characteristic Values

Item	Symbol	Conditions		Values	Unit
Rated resistance	R25		T_C=25℃	5.00	kΩ
B-value	R25/50			3375	K

IGBT IGBT

Output characteristic IGBT,Inverter(typical) Output characteristic IGBT,Inverter(typical)

I_C = f (V_CE) I_C = f (V_CE) T_vj= 150°C

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 5

IGBT IGBT

Transfer characteristic IGBT,Inverter(typical) Switching losses IGBT,Inverter (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 15A, V_CE = 600V

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 6

IGBT IGBT,(RBSOA)

Switching losses IGBT,Inverter( (typical) Reverse bias safe operating area IGBT,Inverter(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 40Ω , V_CE = 600V V_GE = ±15V, R_Goff = 40Ω, T_vj = 150°C

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 7

IGBT

Transient thermal impedance IGBT,Inverter Forward characteristic of Diode,Inverter (typical)

Zth(j-c) = f (t) I_F = f (V_F)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 8

Switching losses Diode,Inverter(typical) Switching losses Diode,Inverter(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 15A, V_CE = 600V R_G = 40Ω, V_CE = 600V

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 9

Transient thermal impedance Diode,Inverter Forward characteristic of Diode,Rectifier (typical)

Zth(j-c) = f (t) I_F = f (V_F)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 10

IGBT

Output characteristic,Brake-Chopper(typical) Forward characteristic of Diode,Brake-Chopper (typical)

I_C = f (V_CE) I_F = f (V_F)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 11

NTC-Thermistor-temperature characteristic (typical)

R = f (T)

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 12

"IGBT 15A 1200V" refers to an Insulated Gate Bipolar Transistor with a current rating of 15 amperes and a voltage rating of 1200 volts. This type of IGBT is suitable for applications with moderate power requirements, such as household appliances, small motor drives, and low-power inverters. Proper thermal management measures are necessary when using this device, and specific technical specifications and usage guidelines can be found in the manufacturer's datasheet based on the specific application requirements.

Circuit diagram headline

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 13

Package outlines

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003 14

Dimensions in (mm)

Tags:

IGBT Modules 34mm

IGBT Modules 62mm

IGBT Modules EconoDual3

IGBT Modules EasyPIM

IGBT Modules EconoPack

IGBT Modules EconoPIM

Automotive Modules

Hybrid SiC Discretes

MOSFET Discrete

IGBT Discrete

1200V 15A IGBT Modules EasyPIM DS-SPS15P12W1M4-S040600003