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Low Switching Losses Infineon Discrete IGBT Transistor Module OEM

Name: Low Switching Losses Infineon Discrete IGBT Transistor Module OEM
Brand: Low Switching Losses Infineon Discrete IGBT Transistor Module OEM
SKU: SPS40G12E3S
Rating: 4.9 (169 reviews)

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Model Number: SPS40G12E3S

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Product Description

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                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                Low Switching Losses Infineon Discrete IGBT, IGBT Transistor Module OEM, Low Switching Losses IGBT Transistor Module
                              

Collector Emitter Capacitance:	170 PF	Configuration:	Single
Current Collector Continuous:	50 A	Current Collector Pulsed:	200 A
Gate Charge:	80 NC	Mounting Style:	Through Hole
Operating Temperature Range:	-55 To 150 Degrees Celsius	Package Type:	TO-247
Package/Case:	TO-247-3	Reverse Recovery Time:	50 Ns
Transistor Polarity:	N-Channel	Voltage Collector Emitter Breakdown Max:	1200 V
Voltage Collector Emitter Saturation Max:	2.2 V	Voltage Gate Emitter Threshold Max:	5 V
Product Name:	Igbt Transistor Module, Sic Igbt Module, Transistors Igbt

Collector Emitter Capacitance:	170 PF
Configuration:	Single
Current Collector Continuous:	50 A
Current Collector Pulsed:	200 A
Gate Charge:	80 NC
Mounting Style:	Through Hole
Operating Temperature Range:	-55 To 150 Degrees Celsius
Package Type:	TO-247
Package/Case:	TO-247-3
Reverse Recovery Time:	50 Ns
Transistor Polarity:	N-Channel
Voltage Collector Emitter Breakdown Max:	1200 V
Voltage Collector Emitter Saturation Max:	2.2 V
Voltage Gate Emitter Threshold Max:	5 V
Product Name:	Igbt Transistor Module, Sic Igbt Module, Transistors Igbt

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM

Solid Power-DS-SPS40G12E3S-S03010001 V1.0

1200V 40A IGBT Discrete

1200V 40A IGBT

General Description

SOLIDPOWER IGBT Discrete provides low switching losses as well as high RBSOA capability. They are designed for the applications such as industrial UPS, charger, Energy storage, Three-level solar string inverter, welding etc.

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 0

Features:

▪ 1200V Trench Field Stop technology

▪ SiC SBD Freewheeling Diodes

▪ Low switching losses

▪ Low gate charge

Typical Applications:

▪ Industrial UPS

▪ Charger

▪ Energy storage

▪ Inverter

▪ Welding

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 2

IGBT IGBT

Output characteristic IGBT Output characteristic IGBT

IC=f(VCE),Tvj=25°C IC=f(VCE) , Tvj=175°C

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 3

FRD IGBT

Output characteristic FRD Collector-emitter saturation voltage IGBT

IF=f(VF) VCE(sat)=f (Tj)

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 4

FRD IGBT

Collector-emitter saturation voltage FRD Gate-emitter threshold voltage IGBT

VF=f (Tj) VGE(th) =f (Tj)

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 5

FRD IGBT

Output characteristic FRD Collector Current IGBT

IF=f(VF) IC=f(TC)

VGE≥15V,Tvj≤175°C

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 6

Gate Charge Characteristics Capacitance Characteristic

VGE(th) =f (Qg) VCE=25V, VGE=0V, f=1MHZ

VGE =15V, IC=40A

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 7

IGBT IGBT

Switching Time IGBT Switching Time IGBT

ts=f (IC), Tvj=25°C ts=f (IC), Tvj=175°C

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 8

IGBT IGBT

Switching Time IGBT Switching Time IGBT

ts=f (RG), Tvj=25°C ts=f (RG), Tvj=175°C

VGE=15V, VCE=600V, IC=40A VGE=15V, VCE=600V, IC=40A

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 9

IGBT IGBT

Switching Time IGBT Switching losses IGBT

ts=f (Tj) E=f (Tj)

VGE=15V, VCE=600V, RG=12Ω, IC=40A VGE=15V, VCE=600V, RG=12Ω, IC=40A

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 10

IGBT IGBT

Switching losses IGBT Switching losses IGBT

E=f ( IC) E=f ( IC)

VGE=15V, VCE=600V, RG=12Ω, Tvj=25°C VGE=15V, VCE=600V, RG=12Ω, Tvj=175°C

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 11

IGBT IGBT

Switching losses IGBT Switching losses IGBT

E=f (RG) E=f (RG)

VGE=15V, VCE=600V, IC=40A, Tvj=25°C VGE=15V, VCE=600V, IC=40A, Tvj=175°C

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 12

IGBT IGBT

Switching losses IGBT Switching losses IGBT

E=f (VCE), Tvj=25°C E=f (VCE), Tvj=175°C

VGE=15V, RG=12Ω, IC=40A VGE=15V, RG=12Ω, IC=40A

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 13

IGBT

Forward Bias SOA Transient thermal impedance IGBT

TC=25°C , VGE=15V, Tvj≤175°C ZthJA=f (t)

Low Switching Losses Infineon Discrete IGBT Transistor Module OEM 14

This is a discrete Insulated Gate Bipolar Transistor (IGBT) with a voltage rating of 1200V and a current rating of 40A. IGBTs are commonly used in power electronic applications for switching high voltages and currents. The specifications indicate that this particular IGBT can handle a maximum voltage of 1200V and a maximum current of 40A. In practical applications, appropriate drive circuitry and heat dissipation considerations are important for ensuring the reliability and performance of the IGBT.

Circuit diagram headline

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Package outlines

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Low Switching Losses Infineon Discrete IGBT Transistor Module OEM