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1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized

Name: 1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized
Brand: 1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized
SKU: SPS12MA12E4S
Rating: 4.8 (133 reviews)

Product Details

Model Number: SPS12MA12E4S

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Product Details

Product Description

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                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                1200V Sic Power Mosfet, 1200V SiC Discretes, Customized Sic Power Mosfet
                              

Current Rating:	40A	Gate Charge:	120nC
Gate Threshold Voltage:	4V	Isolation Voltage:	2500V
Lead-Free:	Yes	Mounting Style:	Through Hole
On-State Resistance:	0.015Ω	Package Type:	TO-247
Reverse Recovery Time:	25ns	Rohs Compliant:	Yes
Short Circuit Withstand Time:	10μs	Switching Frequency:	100kHz
Temperature Range:	-40°C To 175°C	Voltage Rating:	1200V

Current Rating:	40A
Gate Charge:	120nC
Gate Threshold Voltage:	4V
Isolation Voltage:	2500V
Lead-Free:	Yes
Mounting Style:	Through Hole
On-State Resistance:	0.015Ω
Package Type:	TO-247
Reverse Recovery Time:	25ns
Rohs Compliant:	Yes
Short Circuit Withstand Time:	10μs
Switching Frequency:	100kHz
Temperature Range:	-40°C To 175°C
Voltage Rating:	1200V

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized

Solid Power-DS-SPS12MA12E4S

1200V 12mΩ SiC MOSFET

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized 0

Features:

□ High blocking voltage with low On-resistance

□ High speed switching with low capacitances

□ Fast intrinsic diode with low reverse recovery (Qrr)

Typical Applications:

□ PV Inverters

□ Charging Piles

□ Energy storage systems

□ Industrial power supply

□ Industrial Motors

Maximum Ratings @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	Values	Unit
Drain-Source Voltage	VDSmax	VGS=0V, ID=100μA	1200	V
Gate-Source Voltage	VGSop	Static	-5/+20	V
Maximum Gate-Source Voltage	VGSmax	Static	-8/+22	V
Continuous Drain Current	ID	VGS=20V, Tc=25°C	214	A
Continuous Drain Current	ID	VGS=20V, Tc=100°C	151	A
Pulsed Drain Current	ID(pulse)	Pulse width tp limited by Tjmax	400	A
Power Dissipation	PD	TC=25°C, Tj=175°C	938	W
Operating Junction Range	Tj		-55 to +175	°C
Storage Temperature Range	Tstg		-55 to +175	°C

Electrical Characteristics @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	Values min. typ. max.			Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=100μA	1200	-	-	V
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=40mA	2.0	2.7	3.5	V
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=40mA, Tj=175°C	-	1.9	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=1200V, VGS=0V	-	2	100	μA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	10	100	nA
Drain-Source On-State Resistance	RDS(on)	VGS=20V, ID=100A	-	12	20	mΩ
		VGS=20V, ID=100A, Tj=175°C	-	20	-
		VGS=18V, ID=100A	-	13	25
		VGS=18V, ID=100A, Tj=175°C	-	21	-
Transconductance	gfs	VDS=20V, IDS=100A	-	60	-	S
Transconductance	gfs	VDS=20V, IDS=100A, Tj=175°C	-	52	-	S
Turn-On Switching Energy (Body Diode FWD)	Eon	VDS=800V,VGS=-5V/20V, ID=100A, RG(ext)=5Ω, L=100μH, Tj=25°C FWD=SPS12MA12E4S	-	5.2	-	mJ
Turn-Off Switching Energy (Body Diode FWD)	Eoff		-	3.7	-	mJ
Turn-On Delay Time	td(on)	VDD=800V, VGS=-5V/20V, ID=100A,RG(ext)=5Ω, L=100μH	-	24	-	ns
Rise Time	tr		-	149	-
Turn-Off Delay Time	td(off)		-	145	-
Fall Time	tf		-	49	-
Gate to Source Charge	Qgs	VDS=800V, VGS=-5V/20V, ID=100A	-	215	-	nC
Gate to Drain Charge	Qgd		-	179	-
Total Gate Charge	Qg		-	577	-
Input Capacitance	Ciss	VGS=0V, VDS=1000V f=1MHz VAC=25mV	-	8330	-	pF
Output Capacitance	Coss		-	343	-
Reverse Transfer Capacitance	Crss		-	57	-
COSS Stored Energy	Eoss		-	217	-	μJ
Internal Gate Resistance	RG(int)	f=1MHz, VAC=25mV	-	0.8	-	Ω

Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)

Item Symbol		Conditions	Values Unit min. typ. max.
Diode Forward Voltage	VSD	VGS=-5V, ISD=50A	-	4.7	7	V
Diode Forward Voltage	VSD	VGS=-5V, ISD=50A, Tj=175°C	-	3.8	-	V
Continuous Diode Forward Current	IS	VGS=-5V	-	214	-	A
Reverse Recovery Time	trr	VGS=-5V,	-	46	-	ns
Reverse Recovery Charge	Qrr	ISD=100A,	-	1	-	nC
Peak Reverse Recovery Current	Irrm	VR=800V, di/dt=1597A/μs	-	37	-	A

Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)

Item Symbol		Conditions	Values Unit
Thermal Resistance from Junction to Case	RθJC		-	0.16	-	℃/W
Thermal Resistance From Junction to Ambient	RθJA		-	32	-	℃/W

Typical Performance

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized 4

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized 5

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized 6

Typical Performance

Typical Performance

This is a 1200V Silicon Carbide (SiC) MOSFET with an on-state resistance of 12 milliohms (12mΩ). SiC MOSFETs are known for their high voltage capability and low on-state resistance, making them suitable for efficient power electronic applications like high-frequency converters and electric vehicles.

Package Outline: TO-247-4L

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized 18

1200V 12mΩ Sic Power Mosfet Discretes DS-SPS12MA12E4S Customized 19

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