Solid Power-DS-SPS03NM15E3-S03050001 V1.0

1500V 3A N-Channel MOS Discrete

1500V 3A MOSFET 

Features:

•  Fast Switching
•  Low ON Resistance
• Low Gate Charge Minimize Switching loss
•  Fast Recovery Body Diode

Typical Applications:

•  Adaptor
•  Charger
•  SMPS Standby Power

Normalized Drain-source on resistance                                               Normalized Drain-source on resistance

RDSon(P.U.)=f(Tvj)                                                                               RDSon=f(IDS) Tvj=25℃

  IDS=1.3A VGS=10V                                                                              VGS=10V

                                                                                                           MOSFET

Forward characteristic of Diode                                                         Gate charge characteristic MOSFET

IDS=f(VDS)                                                                                        VGS=f(QG)

                                                                                                           VDS=750V, IDS=3A, Tvj=25°C

MOSFET

Capacity characteristic MOSFET                                                        Maximum Power Dissipation

C=f(VDS)                                                                                             PD=f(TC)

  VGS=0V, Tvj=25°C , f=1MHz

Maximum Drain Current                                                                   Forward Biased Safe Operating Area(FBSOA)

ID=f(TC)

MOSFET

  Transient thermal impedance MOSFET

  ZthJC=f (t)

This is a discrete N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a voltage rating of 1500V and a current rating of 3A. N-Channel MOSFETs are commonly used semiconductor devices in various electronic applications, including power supplies, amplifiers, and switch circuits. The 1500V indicates the maximum voltage the device can handle, while the 3A represents the maximum current it can accommodate. In specific applications, proper drive circuitry and heat dissipation should be considered to ensure the reliability and performance of the MOSFET.