1200V 600A IGBT Half Bridge Module-Solid Power-DS-SPS600B12D3A4-S04050035 V-2.0

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C ,VGE=0V

1200

V

连续集电极直流电流

Continuous DC collector current

IC nom

TC=105°C, Tvjmax=175°C

600

A

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

1200

A

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

V

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=600A,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

1.53

1.71

1.83

V

V

V

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=24mA, VCE=VGE, Tvj=25°C

5.5

V

栅极电荷

Gate charge

QG

VGE=-15V…+15V, IC=600A, VCE=600V

4.1

uC

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

2

Ω

输入电容

Input capacitance

Cies

Tvj=25°C,

76

nF

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1200V, VGE=0V,

Tvj=25°C Tvj=125°C Tvj=175°C

0.1

0.35

12

mA

mA

mA

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=±20V, Tvj=125°C

-150 150

nA

开通延迟时间(电感负载)

td(on)

Tvj=25°C Tvj=125°C

435

488

ns

ns

Turn-on delay time, inductive load

Tvj=175°C

510

ns

上升时间(电感负载)

Tvj=25°C

156

ns

Rise time

Tvj=125°C Tvj=175°C

202

225

ns

ns

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

IC=600A, VCC =600V

VGE=±15V

RG=0.51Ω

CGE=0 nF

Inductive Load

Tvj=25°C Tvj=125°C Tvj=175°C

Tvj=25°C Tvj=125°C Tvj=175°C

385

417

427

ns

ns

ns

下降时间(电感负载)

Fall time, inductive load

tf

112

148

176

ns

ns

ns

开通损耗能量(每脉冲)

95

mJ

Turn-on energy loss per pulse

Eon

140

171

mJ

mJ

关断损耗能量(每脉冲)

67

mJ

Turn-off energy loss per pulse

Eoff

99

115

mJ

mJ

短路数据

SC data

ISC

VGE=15V, VCC=900V

VCEM CHIP ≤1200V ,Tvj=175°C

2500

A

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.05

K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150

°C