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1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM

Name: 1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM
Brand: 1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM
SKU: SPS40MA12E4S
Rating: 4.7 (132 reviews)

Product Details

Model Number: SPS40MA12E4S

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Product Details

Product Description

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                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                                1200V Hybrid SiC Discretes, 1200V Sic Mosfet, OEM Hybrid SiC Discretes
                              

Body Diode Voltage Drop:	1.5V	Current Rating:	20A
Gate Charge:	20nC	Gate Threshold Voltage:	4V
Isolation Voltage:	2500V	Maximum Junction Temperature:	175°C
On-State Resistance:	0.1Ω	Output Capacitance:	50pF
Package Type:	TO-247	Reverse Recovery Time:	20ns
Short Circuit Withstand Time:	10μs	Switching Frequency:	100kHz
Temperature Range:	-55°C To +175°C	Voltage Rating:	1200V

Body Diode Voltage Drop:	1.5V
Current Rating:	20A
Gate Charge:	20nC
Gate Threshold Voltage:	4V
Isolation Voltage:	2500V
Maximum Junction Temperature:	175°C
On-State Resistance:	0.1Ω
Output Capacitance:	50pF
Package Type:	TO-247
Reverse Recovery Time:	20ns
Short Circuit Withstand Time:	10μs
Switching Frequency:	100kHz
Temperature Range:	-55°C To +175°C
Voltage Rating:	1200V

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM

Solid Power-DS-SPS40MA12E4S-S03130001 V1.0

1200V 40mΩ SiC MOSFET

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 0

Features:

□ High blocking voltage with low On-resistance

□ High speed switching with low capacitances

□ Fast intrinsic diode with low reverse recovery (Qrr)

Typical Applications:

□ PV Inverters

□ Charging Piles

□ Energy storage systems

□ Industrial power supply

□ Industrial Motors

Maximum Ratings @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	Values	Unit
Drain-Source Voltage	VDSmax	VGS=0V, ID=100μA	1200	V
Gate-Source Voltage	VGSop	Static	-5/+20	V
Maximum Gate-Source Voltage	VGSmax	Static	-8/+22	V
Continuous Drain Current	ID	VGS=20V, Tc=25°C	75	A
Continuous Drain Current	ID	VGS=20V, Tc=100°C	53
Pulsed Drain Current	ID(pulse)	Pulse width tp limited by Tjmax	120	A
Power Dissipation	PD	TC=25°C, Tj=175°C	366	W
Operating Junction Range	Tj		-55 to +175	°C
Storage Temperature Range	Tstg		-55 to +175	°C

Electrical Characteristics @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	min.	Values typ.	max.	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=100μA	1200	-	-	V
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=10mA	2.0	2.8	3.5	V
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=10mA, Tj=175°C	-	1.9	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=1200V, VGS=0V	-	1	100	μA
Gate-Source Leakage Current	IGSS	VGS=20V, VDS=0V	-	10	100	nA
Drain-Source On-State Resistance	RDS(on)	VGS=20V, ID=35A	-	40	60	mΩ
		VGS=20V, ID=35A, Tj=175°C	-	64	-
		VGS=18V, ID=35A	-	43	70
		VGS=18V, ID=35A, Tj=175°C	-	67	-
Transconductance	gfs	VDS=20V, IDS=35A	-	20	-	S
Transconductance	gfs	VDS=20V, IDS=35A, Tj=175°C	-	18	-	S
Turn-On Switching Energy (Body Diode FWD)	Eon	VDS=800V, VGS=-5V/20V, ID=35A,	-	635	-
		VDS=800V, VGS=-5V/20V, ID=35A,
Turn-Off Switching Energy (Body Diode FWD)	Eoff	RG(ext)=2.5Ω, L=200μH, Tj=25°C FWD=SPS40MA12E4S	-	201	-	μJ
Turn-On Delay Time	td(on)		-	9	-
Rise Time	tr	VDD=800V,	-	30	-
Rise Time	tr	VGS=-5V/20V, ID=35A,	-	30	-	ns
Turn-Off Delay Time	td(off)	VGS=-5V/20V, ID=35A,	-	31	-	ns
Turn-Off Delay Time	td(off)	RG(ext)=2.5Ω, L=200μH	-	31	-
Fall Time	tf		-	12	-
Gate to Source Charge	Qgs	VDS=800V, VGS=-5V/20V, ID=35A	-	40	-
Gate to Drain Charge	Qgd		-	60	-	nC
Total Gate Charge	Qg		-	163	-
Input Capacitance	Ciss	VGS=0V, VDS=1000V f=1MHz VAC=25mV	-	2534	-	pF
Output Capacitance	Coss		-	110	-
Reverse Transfer Capacitance	Crss		-	26	-
COSS Stored Energy	Eoss		-	70	-	μJ
Internal Gate Resistance	RG(int)	f=1MHz, VAC=25mV	-	1.6	-	Ω

Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	min.	Values typ.	max.	Unit
Diode Forward Voltage	VSD	VGS=-5V, ISD=20A	-	4.9	7	V
Diode Forward Voltage	VSD	VGS=-5V, ISD=20A, Tj=175°C	-	4.1	-	V
Continuous Diode Forward Current	IS	VGS=-5V	-	75	-	A
Reverse Recovery Time	trr	VGS=-5V,	-	32	-	ns
Reverse Recovery Charge	Qrr	ISD=35A,	-	769	-	nC
Peak Reverse Recovery Current	Irrm	VR=800V, di/dt=3000A/μs	-	39	-	A

Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)

Item	Symbol	Conditions	min.	Values typ.	max.	Unit
Thermal Resistance from Junction to Case	RθJC		-	0.41	-	℃/W

Typical Performance

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 3

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 4

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 5

Typical Performance

Typical Performance

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 12

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 13

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 14

Typical Performance

1200V Hybrid SiC Discretes Mosfet DS-SPS40MA12E4S-S03130001 V1.0 OEM 15

This is a Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a voltage rating of 1200V and an on-state resistance (RDS(on)) of 40 milliohms (40mΩ). SiC MOSFETs are known for their high voltage capability and low on-state resistance, making them suitable for efficient power electronic applications such as high-frequency converters and electric vehicles. The 40mΩ on-state resistance indicates relatively low power losses during conduction, contributing to improved efficiency in high-power applications.

Package Outline: TO-247-4L

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