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IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0

Name: IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0
Brand: IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0
SKU: SPS50B12G3H6
Rating: 5 (137 reviews)

Product Details

Model Number: SPS50B12G3H6

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Product Details

Product Description

Highlight: 
                                                IGBT Mosfet Half Bridge Module, Mosfet Half Bridge Module 1200V, 50A Mosfet Half Bridge Module
                              

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0

Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0

1200V 50A IGBT Half Bridge Module

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 0

Features:

□ 1200V Trench+ Field Stop technology

□ Freewheeling diodes with fast and soft reverse recovery

□ V_CE(sat) with positive temperature coefficient

□ Low switching losses

Typical Applications:

□ Welding

Package

Item	Symbol	Conditions		Values			Unit
Isolation test voltage	VISOL	RMS, f = 50 Hz, t =1 min		4.0			kV
Material of module baseplate				Cu
Internal isolation		(class 1, IEC 61140) Basic insulation (class 1, IEC 61140)		Al₂O₃
Creepage distance	dCreep	terminal to heatsink		17.0			mm
	dCreep	terminal to terminal		20.0
Clearance	dClear	terminal to heatsink		17.0			mm
	dClea	terminal to terminal		9.5
Comparative tracking index	CTI			＞200

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Stray inductance module	LsCE				20		nH
Module lead resistance, terminals - chip	RCC’+EE’		T_C=25℃		0.65		mΩ
Storage temperature	Tstg			-40		125	℃
Mounting torque for module mounting	M6			3.0		5.0	Nm
Terminal connection torque	M5			2.5		5.0	Nm
Weight	G				150		g

IGBT

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Collector-emitter Voltage	VCES		T_vj=25℃	1200	V
Maximum gate-emitter voltage	VGES			±20	V
Transient gate-emitter voltage	VGES	t_p≤10μs,D=0.01		±30	V
Continuous DC collector current	I_C		T_C=25℃	80	A
Continuous DC collector current	I_C		T_C=100℃	50	A
Pulsed collector current,tp limited by T_jmax	ICpulse			100	A
Power dissipation	Ptot			326	W

Characteristic Values

Item	Symbol	Conditions		Values			Unit
Item	Symbol	Conditions		Min.	Typ.	Max.	Unit
Collector-emitter saturation voltage	VCE(sat)	I_C=50A, V_GE=15V	T_vj=25℃		2.07	2.55	V
			T_vj=125℃		2.49
			T_vj=150℃		2.61
Gate threshold voltage	VGE(th)	V_CE=V_GE, I_C=2mA		5.2	5.7	6.3	V
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=25℃			100	µA
Collector-emitter cut-off current	ICES	V_CE=1200V, V_GE=0V	T_vj=150℃			5	mA
Gate-emitter leakage current	IGES	V_CE=0V,V_GE=±20V, T_vj=25℃		-200		200	nA
Gate Charge	Q_G	V_CE=600V, I_C=50A , V_GE=±15V			0.25		μC
Input Capacitance	Cies	V_CE=25V, V_GE=0V, f =100kHz			3.0		nF
Reverse Transfer Capacitance	Cres	V_CE=25V, V_GE=0V, f =100kHz			0.12		nF
Internal gate resistor	RGint	T_vj=25℃			2.8		Ω
Turn-on delay time,inductive load	td(on)	V_CC=600V,I_C=50A R_G=15Ω, V_GE=±15V	T_vj=25℃		52		ns
			T_vj=125℃		49		ns
			T_vj=150℃		49		ns
Rise Time,inductive load	t_r		T_vj=25℃		27		ns
			T_vj=125℃		30		ns
			T_vj=150℃		31		ns
Turn-off delay time,inductive load	td(off)	V_CC=600V,I_C=50A R_G=15Ω, V_GE=±15V	T_vj=25℃		192		ns
			T_vj=125℃		230		ns
			T_vj=150℃		240		ns
Fall time,inductive load	t_f		T_vj=25℃		152		ns
			T_vj=125℃		202		ns
			T_vj=150℃		207		ns
Turn-on energy loss per pulse	Eon	V_CC=600V,I_C=50A R_G=15Ω, V_GE=±15V	T_vj=25℃		3.3		mJ
			T_vj=125℃		5.2		mJ
			T_vj=150℃		5.9		mJ
Turn off Energy loss per pulse	Eoff		T_vj=25℃		2.3		mJ
			T_vj=125℃		3.0		mJ
			T_vj=150℃		3.2		mJ
SC data	ISC	V_GE≤15V, V_CC=800V	tp≤10µs T_vj=150℃			260	A
IGBT thermal resistance,junction-case	RthJC					0.46	K /W
Operating Temperature	TJop			-40		150	℃

Diode

Maximum Rated Values

Item	Symbol	Conditions		Values	Unit
Repetitive reverse voltage	VRRM		T_vj=25℃	1200	V
Continuous DC forward current	I_F			50	A
Diode pulsed current,tp limited by T_Jmax	IFpulse			100	A
I²t-value	I²t			490	A²s

Characteristic Values / 特征值

Item	Symbol	Conditions		Values			Unit
				Min.	Typ.	Max.
Forward voltage	V_F	I_F=50A , V_GE=0V	T_vj=25℃		2.11	2.60	V
			T_vj=125℃		1.85
			T_vj=150℃		1.75
Peak reverse recovery current	IRRM	I_F=50A dI_F/dt=-1300A/μs (T_vj=150°C) V_R=600V, V_GE=-15V	T_vj=25℃		59		A
			T_vj=125℃		83
			T_vj=150℃		90
Reverse recovery charge	QRR		T_vj=25℃		2.0		µC
			T_vj=125℃		6.5
			T_vj=150℃		8.9
Reverse recovery energy loss per pulse	Erec		T_vj=25℃		0.3		mJ
			T_vj=125℃		1.7
			T_vj=150℃		2.7
Diode thermal resistance,junction-case	RthJCD					0.95	K /W
Operating Temperature	TJop			-40		150	℃

Output characteristic(typical) Output characteristic(typical)

I_C = f (V_CE) I_C = f (V_CE) T_vj= 150°C

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 5

IGBT

Transfer characteristic(typical) Switching losses IGBT (typical)

I_C = f (V_GE) E = f (R_G)

V_CE = 20V V_GE = ±15V, I_C = 50A, V_CE = 600V

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 6

IGBT RBSOA

Switching losses IGBT (typical) Reverse bias safe operating area(RBSOA)

E = f (I_C) I_C =f (V_CE)

V_GE = ±15V, R_G = 15Ω , V_CE = 600V V_GE = ±15V, R_goff = 15Ω, T_vj = 150°C

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 7

Typical capacitance as a function of collector-emitter voltage Gate charge (typical)

C = f (V_CE) V_GE = f (Q_G)

f = 100 kHz, V_GE = 0V I_C = 50A, V_CE = 600V

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 8

IGBT

IGBT transient thermal impedance as a function of pulse width Forward characteristic of Diode (typical)

Zth(j-c) = f (t) I_F = f (V_F)

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 9

Switching losses Diode(typical) Switching losses Diode(typical)

E_rec = f (R_G) E_rec = f (I_F)

I_F = 50A, V_CE = 600V R_G = 15Ω, V_CE = 600V

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 10

Diode transient thermal impedance as a function of pulse width

Zth(j-c) = f (t)

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 11

A "1200V 50A IGBT Half Bridge Module" is a power electronics device with two Insulated Gate Bipolar Transistors (IGBTs) configured in a half-bridge setup. It's designed for applications needing bidirectional control of current, with a maximum voltage of 1200 volts and a current capacity of 50 amperes. This module is commonly used in motor drives, inverters, and similar applications where precise control of both voltage and current is crucial. Proper cooling and gate drive circuitry are essential for reliable performance. Detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 12

Package outlines

IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0 13

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IGBT Mosfet Half Bridge Module 1200V 50A Solid Power-DS-SPS50B12G3H6-S04010020 V-3.0