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1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Name: 1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.
Brand: 1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.
SKU: SPS75B17G3
Rating: 4.9 (164 reviews)

Product Details

Model Number: SPS75B17G3

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Product Details

Product Description

Highlight: 
                                                75A H Bridge IGBT Module, 1700V H Bridge IGBT Module, 1700V IGBT Module
                              

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0.

Solid Power-DS-SPS75B17G3-S04010014 V1.0.

1700V 75A IGBT Half Bridge Module

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 0

Features:

1700V Trench Gate & Field Stop Structure
High Short Circuit Capability
Low Switching Loss
High Reliability
Positive Temperature Coefficien

Typical Applications:

Motor Drives
Servo Drives
Inverter and Power Supplies
Photovoltaic

IGBT, Inverter / IGBT,逆变器

Maximum Rated Values / 最大额定值

Item

Symbol

Conditions

Value

Units

集电极－发射极电压

Collector-emitter voltage

VCES

Tvj=25°C

1700

连续集电极直流电流

Continuous DC collector current

IC nom

集电极重复峰值电流

Peak repetitive collector current

ICRM

tp=1ms

150

总功率损耗

Total power dissipation

Ptot

TC=25°C, Tvjmax=175°C

535

栅极－发射极峰值电压

Maximum gate-emitter voltage

VGES

±20

最高结温

Maximum junction temperature

Tvjmax

175

°C

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max.

Units

集电极－发射极饱和电压

Collector-emitter saturation voltage

VCE(sat)

IC=75,VGE=15V

Tvj=25°C Tvj=125°C Tvj=150°C

2.24

2.51 2.56

2.60

栅极阈值电压

Gate threshold voltage

VGE(th)

IC=3mA, VCE=VGE, Tvj=25°C

4.5 5.9 6.5

栅极电荷

Gate charge

VGE=-15V…+15V

0.47

内部栅极电阻

Internal gate resistor

RGint

Tvj=25°C

10.8

Ω

输入电容

Input capacitance

Cies

f=1MHz, Tvj=25°C, VCE=25V, VGE=0V

5.03

反向传输电容

Reverse transfer capacitance

Cres

f=1MHz, Tvj=25°C, VCE=10V, VGE=0V

0.18

集电极-发射极截止电流

Collector-emitter cut-off current

ICES

VCE=1700V, VGE=0V, Tvj=25°C

3.00

栅极-发射极漏电流

Gate-emitter leakage current

IGES

VCE=0V, VGE=20V, Tvj=25°C

400

开通延迟时间(电感负载)

Turn-on delay time, inductive load

td( on)

IC=75A, VCE=900V

VGE=±15V

RGon=6.6Ω

RGoff=6.6Ω

Inductive Load,

Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C Tvj=25°C Tvj=125°C Tvj=150°C

174

184

188

上升时间(电感负载)

Rise time, inductive load

关断延迟时间(电感负载)

Turn-off delay time, inductive load

td(off)

319

380

401

下降时间(电感负载)

Fall time, inductive load

310

562

596

开通损耗能量(每脉冲)

Turn-on energy loss per pulse

Eon

24.7

27.6

28.4

关断损耗能量(每脉冲)

Turn-off energy loss per pulse

Eoff

10.9

16.1

17.5

短路数据

SC data

ISC

VGE≤15V, VCC=1000V

VCEmax=VCES-LsCE·di/dt, tp=10µs, Tvj=150°C

240

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per IGBT / 每个 IGBT

0.28 K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150 °C

Diode, Inverter / 二极管,逆变器

Maximum Rated Values /最大额定值

Item

Symbol

Conditions

Value Units

反向重复峰值电压

Peak repetitive reverse voltage

VRRM

Tvj=25°C

1700 V

连续正向直流电流

Continuous DC forward current

75 A

正向重复峰值电流

Peak repetitive forward current

IFRM

tp=1ms

150 A

Characteristic Values / 特征值

Item

Symbol

Conditions

Min. Typ. Max. Units

正向电压

Forward voltage

IF=75A

Tvj=25°C

Tvj=125°C

Tvj=150°C

1.59

1.72 1.71

2.25

反向恢复峰值电流

Peak reverse recovery current

IRM

IF=75A

-diF/dtoff=1100A/µs

VR =900 V

VGE=-15V

Tvj=25°C

Tvj=125°C

Tvj=150°C

101

108

恢复电荷

Recovery charge

Tvj=25°C

Tvj=125°C

Tvj=150°C

23.5

32.9 36.2

反向恢复损耗(每脉冲)

Reverse recovery energy (per pulse)

Erec

Tvj=25°C

Tvj=125°C

Tvj=150°C

11.8

17.8 19.6

结－外壳热阻

Thermal resistance, junction to case

RthJC

Per diode / 每个二极管

0.48 K/W

工作温度

Temperature under switching conditions

Tvjop

-40 150 °C

Module / 模块

Item

Symbol

Conditions

Value

Unit

绝缘测试电压

Isolation test voltage

VISOL

RMS, f=50Hz, t=1min

4.0

模块基板材料

Material of module baseplate

内部绝缘

Internal isolation

基本绝缘 (class 1, IEC 61140)

Basic insulation (class 1, IEC 61140)

Al2O3

爬电距离

Creepage distance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

电气间隙

Clearance

端子-散热片 / terminal to heatsink

端子-端子/terminal to terminal

9.5

相对电痕指数

Comparative tracking index

CTI

>200

Item

Symbol

Conditions

Min.

Typ.

Max.

Units

杂散电感,模块

Stray inductance module

LsCE

模块引脚电阻, 端子-芯片

Module Lead Resistance ,Terminals-Chip

RCC’+EE’

RAA’+CC’

0.65

mΩ

储存温度

Storage temperature

Tstg

-40

125

°C

模块安装的安装扭距

Mounting torque for module mounting

3.00

5.00

端子联接扭距

Terminal connection torque

3.00

5.00

重量

Weight

160

IGBT IGBT

Output characteristic IGBT, Inverter (typical) Output characteristic IGBT, Inverter (typical)

IC=f (VCE) IC=f(VCE)

VGE=15V Tvj=150°C

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 1

IGBT IGBT

Transfer characteristic IGBT, Inverter (typical) Switching losses IGBT, Inverter (typical)

IC=f(VGE) E=f(IC)

VCE=20V VGE=±15V, RG=6.6Ω, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 2

IGBT IGBT

Switching losses IGBT, Inverter (typical) Switching losses IGBT, Inverter (typical)

E=f (RG) E=f(IC)

VGE=±15V, IC=75A, VCE=900V VGE=±15V, RG=6.6Ω, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 3

IGBT IGBT

Switching losses IGBT, Inverter (typical) Transient thermal impedance IGBT, Inverter

E=f (RG) ZthJC=f (t)

VGE=±15V, IC=75A, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 4

IGBT,RBSOA

Reverse bias safe operating area IGBT, Inverter (RBSOA) Forward characteristic of Diode, Inverter (typical)

I_C=f _(VCE) I_F=f _(VF)

V_GE=±15V, R_Goff=6.6Ω, Tvj=150°C

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 5

Switching losses Diode, Inverter (typical) Switching losses Diode, Inverter (typical)

Erec=f (IF) Erec=f (RG)

RG=6.6 Ω, VCE=900V IF=75A, VCE=900V

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 6

Transient thermal impedance Diode, Inverter

ZthJC=f (t)

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 7

A "1700V IGBT" is an Insulated Gate Bipolar Transistor capable of handling a maximum voltage of 1700 volts. It is used in applications that require the management of higher voltage levels, such as high-power inverters, motor drives, or power supplies. Proper cooling and gate drive circuitry are essential for optimal performance. Detailed specifications can be found in the manufacturer's datasheet.

Circuit diagram headline

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 9

Package outlines

1700V 75A H Bridge IGBT Module DS-SPS75B17G3-S04010014 V1.0. 10

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